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InGaN/GaN-based green-light-emitting diodes with an inserted InGaN/GaN-graded superlattice layer
Jin-Young Park, 1 Jin-Hong Lee, 1 Soyoun Jung, 2 Taeksoo Ji 3 , Jin‐Young Park, Jin‐Hong Lee
1  Korea Photonics Technology Institute; Gwangju 500-779 Korea
2  Samsung Display. Co. Ltd.; Youngin 446-711 Korea
3  School of Electronics and Computer Engineering; Chonnam National University; Gwangju 500-757 Korea

Published: 15 February 2016 by Wiley in physica status solidi (a)
Wiley, Volume 213; 10.1002/pssa.201533092
Keywords: electron injection, graded superlattices, Ingan/gan, light-emitting diodes, Multiple Quantum Wells
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