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Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire Channels
Jun-Young Park, Byung-Hyun Lee, Ki Soo Chang, Dong Uk Kim, Chanbae Jeong, Choong-Ki Kim, Hagyoul Bae, Yang-Kyu Choi

Published: 01 November 2017 by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
Institute of Electrical and Electronics Engineers (IEEE), Volume 64; 10.1109/TED.2017.2749324
Keywords: structure, silicon, numerical simulations, Heat, channels, nanowire, Electrical, GATE, MOSFETs, Shes
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