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Electromechanical Dopant–Defect Interaction in Acceptor-Doped Ceria
1  Technical University of Denmark

https://doi.org/10.3390/PCMS-08973 (registering DOI)
Abstract:

Oxygen defective cerium oxide CeO2-delta exhibits a non-classical giant electromechanical response that is superior to that of lead-based electrostrictors. The main principle of such response is governed by the re-orientation of cerium-oxygen vacancy pairs in the host lattice. In this work, we report the key-role of acceptor dopants, with different size and valence (Mg2+, Sc3+,Gd3+, and La3+), on polycrystalline bulk ceria. Different dopants tune the electrostrictive properties by changing the electrosteric dopant–defect interactions. We find two distinct electromechanical behaviors: when the interaction is weak (dopant-vacancy binding energy 0.3 eV), electrostriction displays a high coefficient (M33), up to 10-17 m2/v2 , with strongly time-dependent effects. In contrast, we observe no time-dependent effects when the interaction becomes strong (0.6 eV).

Keywords: Ceramics; Ceria; Electrostriction; Ionic Conductivity; Defect Chemistry

 
 
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