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Goran Mashanovich   Professor  Senior Scientist or Principal Investigator 
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Goran Mashanovich published an article in August 2018.
Top co-authors See all
Matthew Halsall

112 shared publications

Photon Science Institute, School of Electrical and Electronic Engineering, The University of Manchester, Manchester M13 9PL, United Kingdom

Aravind Vijayaraghavan

99 shared publications

School of Materials, The University of Manchester, Manchester M13 9PL, U.K.

G. T. Reed

95 shared publications

Optoelectronics Research Centre, University of Southampton, Southampton SO17 1JB, UK

Milos Nedeljkovic

88 shared publications

Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK

David Thomson

71 shared publications

Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, UK

15
Publications
16
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0
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59
Citations
Publication Record
Distribution of Articles published per year 
(2007 - 2018)
Total number of journals
published in
 
12
 
Publications See all
Article 0 Reads 5 Citations High-speed silicon modulators for the 2 μm wavelength band Wei Cao, David Hagan, David J. Thomson, Milos Nedeljkovic, C... Published: 28 August 2018
Optica, doi: 10.1364/optica.5.001055
DOI See at publisher website ABS Show/hide abstract
The 2 μm wavelength band has become a promising candidate to be the next communication window. We demonstrate high-speed modulators based on a 220 nm silicon-on-insulator platform working at a wavelength of 1950 nm, using the free carrier plasma dispersion effect in silicon. A Mach–Zehnder interferometer modulator and a microring modulator have been characterized. At 1950 nm, the carrier-depletion modulator operates at a data rate of 20 Gbit/s with an extinction ratio of 5.8 dB and insertion loss of 13 dB. The modulation efficiency (Vπ·Lπ) is 2.68 V·cm at 4 V reverse bias. The device operation is broadband, and we also characterize its performance at 1550 nm. At 1550 nm, an open eye is obtained at 30 Gbit/s. The difference in bandwidth is caused by the bandwidth limit of the 2 μm measurement setup. We also show a ring modulator paired with a low power integrated driver working in hybrid carrier depletion and injection mode at a data rate of 3 Gbit/s with power consumption of 2.38 pJ/bit in the 2 μm wavelength range. This work is a proof of principle demonstration and paves a route toward a full silicon-based transceiver in the 2 μm window.
Article 2 Reads 4 Citations Group IV mid-infrared photonics [Invited] G. Z. Mashanovich, M. Nedeljkovic, J. Soler-Penades, Z. Qu, ... Published: 19 July 2018
Optical Materials Express, doi: 10.1364/ome.8.002276
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In this paper we review our recent results on group IV mid-infrared photonic devices. In particular, passive structures suitable for long wavelength operation, such as suspended Si, Ge-on-Si and suspended Ge, are analyzed. In addition, Ge-on-insulator waveguides have been characterized at 3.8 μm. Several active devices have been also realized: optical modulators in silicon and germanium, and silicon and graphene detectors operating at shorter mid-IR wavelengths.
Article 0 Reads 0 Citations Author Correction: Multipurpose silicon photonics signal processor core. Ivana Gasulla, Lee Crudgington, Daniel Pérez, David J Thomso... Published: 29 November 2017
Nature Communications, doi: 10.1038/s41467-017-01529-w
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Change History: A correction to this article has been published and is linked from the HTML version of this article.
Article 0 Reads 0 Citations Raman Mapping Analysis of Graphene-Integrated Silicon Micro-Ring Resonators Siham M. Hussein, Iain F. Crowe, Nick Clark, Milan Milosevic... Published: 22 November 2017
Nanoscale Research Letters, doi: 10.1186/s11671-017-2374-4
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We present a Raman mapping study of monolayer graphene G and 2D bands, after integration on silicon strip-waveguide-based micro-ring resonators (MRRs) to characterize the effects of the graphene transfer processes on its structural and optoelectronic properties. Analysis of the Raman G and 2D peak positions and relative intensities reveal that the graphene is electrically intrinsic where it is suspended over the MRR but is moderately hole-doped where it sits on top of the waveguide structure. This is suggestive of Fermi level ‘pinning’ at the graphene-silicon heterogeneous interface, and we estimate that the Fermi level shifts down by approximately 0.2 eV from its intrinsic value, with a corresponding peak hole concentration of ~ 3 × 1012 cm−2. We attribute variations in observed G peak asymmetry to a combination of a ‘stiffening’ of the E 2g optical phonon where the graphene is supported by the underlying MRR waveguide structure, as a result of this increased hole concentration, and a lowering of the degeneracy of the same mode as a result of localized out-of-plane ‘wrinkling’ (curvature effect), where the graphene is suspended. Examination of graphene integrated with two different MRR devices, one with radii of curvature r = 10 μm and the other with r = 20 μm, indicates that the device geometry has no measureable effect on the level of doping.
Article 0 Reads 5 Citations Silicon Photonics Rectangular Universal Interferometer Daniel Perez, Ivana Gasulla, Francisco Javier Fraile, Lee Cr... Published: 07 November 2017
Laser & Photonics Reviews, doi: 10.1002/lpor.201700219
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Universal multiport photonic interferometers that can implement any arbitrary unitary transformation between input and output optical modes are essential to support advanced optical functions. Integrated versions of these components can be implemented by means of either a fixed triangular or a fixed rectangular arrangement of the same components. We propose the implementation of a fixed rectangular universal interferometer using a reconfigurable hexagonal waveguide mesh circuit. A suitable adaptation synthesis algorithm tailored to this mesh configuration is provided and the experimental demonstration of a rectangular multiport interferometer by means of a fabricated silicon photonics chip is reported. The 7-hexagonal cell chip can implement 2 × 2, 3 × 3 and 4 × 4 arbitrary unitary transformations. The proposed hexagonal waveguide mesh operates in a similar way as a Field Programmable Gate Array (FPGA) in electronics. We believe that this work represents an important step-forward towards fully programmable and integrable multiport interferometers.
Article 0 Reads 19 Citations Multipurpose silicon photonics signal processor core. Daniel Pérez, Ivana Gasulla, Lee Crudgington, Ke Li, Wei Cao... Published: 21 September 2017
Nature Communications, doi: 10.1038/s41467-017-00714-1
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Integrated photonics changes the scaling laws of information and communication systems offering architectural choices that combine photonics with electronics to optimize performance, power, footprint, and cost. Application-specific photonic integrated circuits, where particular circuits/chips are designed to optimally perform particular functionalities, require a considerable number of design and fabrication iterations leading to long development times. A different approach inspired by electronic Field Programmable Gate Arrays is the programmable photonic processor, where a common hardware implemented by a two-dimensional photonic waveguide mesh realizes different functionalities through programming. Here, we report the demonstration of such reconfigurable waveguide mesh in silicon. We demonstrate over 20 different functionalities with a simple seven hexagonal cell structure, which can be applied to different fields including communications, chemical and biomedical sensing, signal processing, multiprocessor networks, and quantum information systems. Our work is an important step toward this paradigm.Integrated optical circuits today are typically designed for a few special functionalities and require complex design and development procedures. Here, the authors demonstrate a reconfigurable but simple silicon waveguide mesh with different functionalities.
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