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Onkar Mangla     University Lecturer 
Physics Department, Daulat Ram College, University of Delhi, Delhi-110007, INDIA
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Onkar Mangla published an article in April 2018.
Research Keywords & Expertise
0 A
0 Nanofabrication
Top co-authors
Kostya (Ken) Ostrikov

542 shared publications

School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, QLD 4000, Brisbane, AUSTRALIA

Savita Roy

2 shared publications

Physics Department, Daulat Ram College, University of Delhi, Delhi 110007, India

Publication Record
Distribution of Articles published per year 
(2014 - 2018)
Total number of journals
published in
Publications See all
Article 0 Reads 0 Citations Annealing of deep level defects in GaAs nanostructures by ion beam irradiation Onkar Mangla, Savita Roy, S. Annapoorni, K. Asokan Published: 01 April 2018
Materials Letters, doi: 10.1016/j.matlet.2018.01.091
DOI See at publisher website
Article 0 Reads 0 Citations Study of electrical properties of hafnium oxide thin film based metal–insulator–metal capacitors: pre and post metallic ... O. Mangla, V. Gupta Published: 07 October 2016
Journal of Materials Science: Materials in Electronics, doi: 10.1007/s10854-016-5783-8
DOI See at publisher website
PROCEEDINGS-ARTICLE 2 Reads 0 Citations Gallium nitride nanoneedles grown in extremely non-equilibrium nitrogen plasma O. Mangla, S. Roy Published: 01 January 2016
DAE SOLID STATE PHYSICS SYMPOSIUM 2015, doi: 10.1063/1.4947661
DOI See at publisher website
Article 0 Reads 6 Citations Dense Plasma Focus-Based Nanofabrication of III–V Semiconductors: Unique Features and Recent Advances Onkar Mangla, Savita Roy, Kostya (Ken) Ostrikov, Krasimir Va... Published: 29 December 2015
Nanomaterials, doi: 10.3390/nano6010004
DOI See at publisher website PubMed View at PubMed ABS Show/hide abstract
The hot and dense plasma formed in modified dense plasma focus (DPF) device has been used worldwide for the nanofabrication of several materials. In this paper, we summarize the fabrication of III–V semiconductor nanostructures using the high fluence material ions produced by hot, dense and extremely non-equilibrium plasma generated in a modified DPF device. In addition, we present the recent results on the fabrication of porous nano-gallium arsenide (GaAs). The details of morphological, structural and optical properties of the fabricated nano-GaAs are provided. The effect of rapid thermal annealing on the above properties of porous nano-GaAs is studied. The study reveals that it is possible to tailor the size of pores with annealing temperature. The optical properties of these porous nano-GaAs also confirm the possibility to tailor the pore sizes upon annealing. Possible applications of the fabricated and subsequently annealed porous nano-GaAs in transmission-type photo-cathodes and visible optoelectronic devices are discussed. These results suggest that the modified DPF is an effective tool for nanofabrication of continuous and porous III–V semiconductor nanomaterials. Further opportunities for using the modified DPF device for the fabrication of novel nanostructures are discussed as well.
Article 1 Read 1 Citation Study of La-Incorporated HfO2 MIM Structure Fabricated Using PLD System for Analog/Mixed Signal Applications Ashutosh Srivastava, Onkar Mangla, Vinay Gupta Published: 01 July 2015
IEEE Transactions On Nanotechnology, doi: 10.1109/tnano.2015.2422754
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Article 0 Reads 3 Citations A study on aberrations in energy band gap of quantum confined gallium arsenide spherical nanoparticles Onkar Mangla, Savita Roy Published: 01 March 2015
Materials Letters, doi: 10.1016/j.matlet.2014.12.083
DOI See at publisher website