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Massimo Innocenti      
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Massimo Innocenti published an article in October 2018.
Top co-authors See all
Luigi Messori

189 shared publications

Laboratory of Metals in Medicine (MetMed), Department of Chemistry “U. Schiff”; University of Florence; Via della Lastruccia 3 50019 Sesto Fiorentino Italy

Francesco Vizza

183 shared publications

ICCOM-CNR

Antonio Bianchi

132 shared publications

Department of Chemistry “Ugo Schiff”, University of Florence, via della Lastruccia 3, 50019 Sesto Fiorentino, Italy

Werner Oberhauser

126 shared publications

Istituto di Chimica dei Composti Organometallici (ICCOM-CNR); Area di Ricerca CNR di Firenze; via Madonna del Piano 10 50019 Sesto Fiorentino Italy

Alessandro Lavacchi

83 shared publications

Institute for the Chemistry of Organometallic Compounds, Italian National Council for Research, 50019 Florence, Italy

13
Publications
21
Reads
8
Downloads
31
Citations
Publication Record
Distribution of Articles published per year 
(2010 - 2018)
Total number of journals
published in
 
13
 
Publications See all
Article 0 Reads 1 Citation MWCNTs-Supported Pd(II) Complexes with High Catalytic Efficiency in Oxygen Reduction Reaction in Alkaline Media Maurizio Passaponti, Matteo Savastano, M. Paz Clares, Mario ... Published: 24 October 2018
Inorganic Chemistry, doi: 10.1021/acs.inorgchem.8b02695
DOI See at publisher website
Article 1 Read 0 Citations On the Contrasting Effect Exerted by a Thin Layer of CdS against the Passivation of Silver Electrodes Coated with Thiols Emanuele Salvietti, Walter Giurlani, Maria Luisa Foresti, Ma... Published: 31 July 2018
Surfaces, doi: 10.3390/surfaces1010004
DOI See at publisher website ABS Show/hide abstract
The passivation of metal electrodes covered by self-assembled monolayers of long-chain thiols is well known. The disappearance of the voltammetric peak of redox species in solution is a classical test for the formation of full layers of thiols. Similar studies on semiconductors are still very limited. We used silver surfaces covered by an ultrathin layer of CdS as substrate for self-assembling of n-hexadecanethiol (C16SH), and we compared the experimental results with those obtained by using the bare silver surface as substrate. The strong insulating effect of C16SH deposited on Ag(III) is shown by the inhibition of the voltammetric peak of Ru(NH3)63+/2+. On the contrary, the voltammogram obtained on CdS-covered Ag(III) is very similar to that obtained on the bare Ag(III) electrode, thus suggesting that the presence of CdS exerts a contrasting effect on the passivation of the silver electrode. A crucial point of our work is to demonstrate the effective formation of C16SH monolayers on Ag(III) covered by CdS. The formation of full layers of C16SH was strongly suggested by the inhibition of the stripping peak of Cd from the CdS deposit covered by C16SH. The presence of C16SH was confirmed by electrochemical quartz crystal microbalance (EQCM) measurements as well as by Auger electron spectroscopy (AES) analysis.
Article 3 Reads 0 Citations Electroplating for Decorative Applications: Recent Trends in Research and Development Walter Giurlani, Giovanni Zangari, Filippo Gambinossi, Mauri... Published: 25 July 2018
Coatings, doi: 10.3390/coatings8080260
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Electroplating processes are widely employed in industrial environments for a large variety of metallic coatings, ranging from technological to decorative applications. Even if the galvanic electrodeposition is certainly a mature technology, new concepts, novel applications, environmental legislation and the new material requirements for next-generation devices make the scientific research in this field still very active. This review focuses mostly at the decorative and wearable applications, and aims to create a bridge between the past knowledge and the future direction that this process, i.e., electrodeposition, is taking. Both the theoretical fundamentals as well as some of the most widespread practical applications—limited to metallic and alloy coatings—are explored. As an integral part of the industrial process, we take a look at the main techniques thought which the quality control of deposits and surfaces is carried out. Finally, global industrial performance and research directions towards sustainable solutions are highlighted.
Article 0 Reads 1 Citation Selective Electrodesorption-Based Atomic Layer Deposition (SEBALD) of Bismuth under Morphological Control Walter Giurlani, Andrea Giaccherini, Emanuele Salvietti, Mau... Published: 02 July 2018
The Electrochemical Society Interface, doi: 10.1149/2.f08182if
DOI See at publisher website
BOOK-CHAPTER 2 Reads 0 Citations E-ALD: Tailoring the Optoeletronic Properties of Metal Chalcogenides on Ag Single Crystals Emanuele Salvietti, Andrea Giaccherini, Filippo Gambinossi, ... Published: 07 March 2018
Semiconductors - Growth and Characterization, doi: 10.5772/intechopen.71014
DOI See at publisher website
Article 0 Reads 0 Citations Ferrocene Molecular Architectures Grafted on Si(111): A Theoretical Calculation of the Standard Oxidation Potentials and... Claudio Fontanesi, Massimo Innocenti, Davide Vanossi, Enrico... Published: 21 September 2017
Materials, doi: 10.3390/ma10101109
DOI See at publisher website PubMed View at PubMed ABS Show/hide abstract
The standard oxidation potential and the electron transfer (ET) rate constants of two silicon-based hybrid interfaces, Si(111)/organic-spacer/Ferrocene, are theoretically calculated and assessed. The dynamics of the electrochemical driven ET process is modeled in terms of the classical donor/acceptor scheme within the framework of "Marcus theory". The ET rate constants, k E T , are determined following calculation of the electron transfer matrix element, V R P , together with the knowledge of the energy of the neutral and charge separated systems. The recently introduced Constrained Density Functional Theory (CDFT) method is exploited to optimize the structure and determine the energy of the charge separated species. Calculated ET rate constants are k E T = 77.8 s - 1 and k E T = 1.3 × 10 - 9 s - 1 , in the case of the short and long organic-spacer, respectively.
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