Please login first
Callum George Littlejohns  - - - 
Top co-authors See all
G. T. Reed

97 shared publications

Optoelectronics Research Centre, University of Southampton, Southampton SO17 1JB, UK

Milos Nedeljkovic

88 shared publications

Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK

David Thomson

74 shared publications

Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, UK

Wanjun Wang

23 shared publications

Silicon Technologies Centre of Excellence, Nanyang Technological University, Singapore 639798, Singapore

Zecen Zhang

16 shared publications

Nanyang Technological Univ. (Singapore)

21
Publications
0
Reads
0
Downloads
47
Citations
Publication Record
Distribution of Articles published per year 
(2014 - 2018)
Total number of journals
published in
 
15
 
Publications See all
Article 0 Reads 2 Citations High-speed silicon modulators for the 2 μm wavelength band Wei Cao, David Hagan, David J. Thomson, Milos Nedeljkovic, C... Published: 28 August 2018
Optica, doi: 10.1364/optica.5.001055
DOI See at publisher website ABS Show/hide abstract
The 2 μm wavelength band has become a promising candidate to be the next communication window. We demonstrate high-speed modulators based on a 220 nm silicon-on-insulator platform working at a wavelength of 1950 nm, using the free carrier plasma dispersion effect in silicon. A Mach–Zehnder interferometer modulator and a microring modulator have been characterized. At 1950 nm, the carrier-depletion modulator operates at a data rate of 20 Gbit/s with an extinction ratio of 5.8 dB and insertion loss of 13 dB. The modulation efficiency (Vπ·Lπ) is 2.68 V·cm at 4 V reverse bias. The device operation is broadband, and we also characterize its performance at 1550 nm. At 1550 nm, an open eye is obtained at 30 Gbit/s. The difference in bandwidth is caused by the bandwidth limit of the 2 μm measurement setup. We also show a ring modulator paired with a low power integrated driver working in hybrid carrier depletion and injection mode at a data rate of 3 Gbit/s with power consumption of 2.38 pJ/bit in the 2 μm wavelength range. This work is a proof of principle demonstration and paves a route toward a full silicon-based transceiver in the 2 μm window.
PROCEEDINGS-ARTICLE 0 Reads 0 Citations 20-Gb/s Silicon Optical Modulators for the 2 μm Wavelength Band Wei Cao, David J. Thomson, Milos Nedeljkovic, Shaif-Ul Alam,... Published: 01 August 2018
2018 IEEE 15th International Conference on Group IV Photonics (GFP), doi: 10.1109/group4.2018.8478691
DOI See at publisher website
Article 0 Reads 2 Citations Ion Implantation in Silicon for Trimming the Operating Wavelength of Ring Resonators Milan M. Milosevic, Xia Chen, Wei Cao, Antoine F. J. Runge, ... Published: 01 July 2018
IEEE Journal of Selected Topics in Quantum Electronics, doi: 10.1109/jstqe.2018.2799660
DOI See at publisher website
Article 4 Reads 0 Citations Experimental Demonstration of Thermally Tunable Fano and EIT Resonances in Coupled Resonant System on SOI Platform Zecen Zhang, Geok Ing Ng, Ting Hu, Haodong Qiu, Xin Guo, Wan... Published: 01 June 2018
IEEE Photonics Journal, doi: 10.1109/jphot.2018.2839621
DOI See at publisher website
Article 0 Reads 1 Citation Mid-Infrared Sensor Based on a Suspended Microracetrack Resonator With Lateral Subwavelength-Grating Metamaterial Claddi... Zecen Zhang, Geok Ing Ng, Ting Hu, Haodong Qiu, Xin Guo, Wan... Published: 01 April 2018
IEEE Photonics Journal, doi: 10.1109/jphot.2018.2809662
DOI See at publisher website
PROCEEDINGS-ARTICLE 0 Reads 0 Citations All silicon approach to modulation and detection at λ = 2 µm Callum G. Littlejohns, Milos Nedeljkovic, David E. Hagan, Ja... Published: 22 February 2018
Optical Interconnects XVIII, doi: 10.1117/12.2288951
DOI See at publisher website
Top