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Mara Bruzzi  - - - 
264
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102
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Publication Record
Distribution of Articles published per year 
(1989 - 2019)
Total number of journals
published in
 
15
 
Publications See all
Article 0 Reads 1 Citation Defective States in Micro-Crystalline CsPbBr3 and Their Role on Photoconductivity Mara Bruzzi, Fabio Gabelloni, Nicola Calisi, Stefano Caporal... Published: 01 February 2019
Nanomaterials, doi: 10.3390/nano9020177
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Intrinsic defects in CsPbBr3 microcrystalline films have been studied using thermally stimulated current (TSC) technique in a wide temperature range (100–400 K). Below room temperature, TSC emission is composed by a set of several energy levels, in the range 0.11–0.27 eV, suggesting a quasi-continuum distribution of states with almost constant density. Above room temperature, up to 400 K, the temperature range of interest for solar cells, both dark current and photocurrent, are mainly dominated by energy levels in the range 0.40–0.45 eV. Even if measured trap densities are high, in the range 1013–1016 cm−3, the very small capture cross-sections, about 10−26 m2, agree with the high defect tolerance characterizing this material.
Article 0 Reads 1 Citation Gas Sensing Properties of In2O3 Nano-Films Obtained by Low Temperature Pulsed Electron Deposition Technique on Alumina S... Tommaso Addabbo, Mara Bruzzi, Ada Fort, Marco Mugnaini, Vale... Published: 13 December 2018
Sensors, doi: 10.3390/s18124410
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Nanostructured Indium(III) oxide (In2O3) films deposited by low temperature pulsed electron deposition (LPED) technique on customized alumina printed circuit boards have been manufactured and characterized as gas sensing devices. Their electrical properties have monitored directly during deposition to optimize their sensing performance. Experimental results with oxidizing (NO2) as well as reducing (CO) gases in both air and inert gas carriers are discussed and modeled.
Article 0 Reads 0 Citations Conversion efficiency of Si-InGaAs and GaAsP-Si-Ge lateral beam splitting photovoltaic devices Mara Bruzzi, Andrea Baldi, Ennio A. Carnevale, Maracantonio ... Published: 01 April 2018
Measurement, doi: 10.1016/j.measurement.2018.01.035
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Article 0 Reads 2 Citations Quartz-Crystal Microbalance Gas Sensors Based on TiO2 Nanoparticles Tommaso Addabbo, Ada Fort, Marco Mugnaini, Valerio Vignoli, ... Published: 01 March 2018
IEEE Transactions on Instrumentation and Measurement, doi: 10.1109/tim.2017.2785118
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Article 0 Reads 2 Citations Thermally Stimulated Currents in Nanocrystalline Titania Mara Bruzzi, Riccardo Mori, Andrea Baldi, Ennio Antonio Carn... Published: 05 January 2018
Nanomaterials, doi: 10.3390/nano8010013
DOI See at publisher website PubMed View at PubMed ABS Show/hide abstract
A thorough study on the distribution of defect-related active energy levels has been performed on nanocrystalline TiO2. Films have been deposited on thick-alumina printed circuit boards equipped with electrical contacts, heater and temperature sensors, to carry out a detailed thermally stimulated currents analysis on a wide temperature range (5–630 K), in view to evidence contributions from shallow to deep energy levels within the gap. Data have been processed by numerically modelling electrical transport. The model considers both free and hopping contribution to conduction, a density of states characterized by an exponential tail of localized states below the conduction band and the convolution of standard Thermally Stimulated Currents (TSC) emissions with gaussian distributions to take into account the variability in energy due to local perturbations in the highly disordered network. Results show that in the low temperature range, up to 200 K, hopping within the exponential band tail represents the main contribution to electrical conduction. Above room temperature, electrical conduction is dominated by free carriers contribution and by emissions from deep energy levels, with a defect density ranging within 1014–1018 cm−3, associated with physio- and chemi-sorbed water vapour, OH groups and to oxygen vacancies.
PREPRINT 0 Reads 0 Citations Thermally Stimulated Currents in Nanocrystalline Titania Mara Bruzzi, Riccardo Mori, Andrea Baldi, Ennio Antonio Carn... Published: 01 November 2017
MATERIALS SCIENCE, doi: 10.20944/preprints201711.0002.v1
DOI See at publisher website ABS Show/hide abstract
A thorough study on the distribution of defect-related active energy levels has been performed on nanocrystalline TiO2. Films have been deposited on thick-alumina printed circuit boards equipped with electrical contacts, heater and temperature sensors, to carry out a detailed thermally stimulated currents analysis on a wide temperature range (5-630K), in view to evidence contributions from shallow to deep energy levels within the gap. Data have been processed by numerically modelling electrical transport. The model considers both free and hopping contribution to conduction, a density of states characterized by an exponential tail of localized states below the conduction band and the convolution of standard TSC emissions with gaussian distributions to take into account the variability in energy due to local perturbations in the highly disordered network. Results show that in the low temperature range, up to 200K, hopping within the exponential band tail represents the main contribution to electrical conduction. Above room temperature, electrical conduction is dominated by free carriers contribution and by emissions from deep energy levels, with a defect density ranging within 1014 – 1018cm-3, associated to physio- and chemi-sorbed water vapour,OH groups and to vacancy-oxygen defects.
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