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Syed Zeeshan Ali  - - - 
Top co-authors See all
Denis Flandre

492 shared publications

ICTEAM Institute, Université catholique de Louvain, 3 Place du Levant, B-1348, Louvain-la-Neuve, Belgium

Laurent A Francis

105 shared publications

Electrical Engineering Department, Universite Catholique de Louvain, Microsystems Chair, Place du Levant, 3, Maxwell Building, B-1348 Louvain-la-Neuve, BELGIUM, Louvain-la-Neuve, 1348, BELGIUM

Octavian Buiu

84 shared publications

Honeywell Romania SRL, Sensors and Wireless Laboratory Bucharest (SWLB), Bucharest 020339, Romania; s:(A.S.);(V.A.);(C.C.);(M.B.);(O.B.)

N. André

23 shared publications

ICTEAM, Université catholique de Louvain, 1348 Louvain-la-Neuve, Belgium

Pierre Gérard

12 shared publications

ICTEAM, Universite Catholique de Louvain, Louvain-la-Neuve, BELGIUM

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Publication Record
Distribution of Articles published per year 
(2014 - 2018)
Total number of journals
published in
 
3
 
Publications
Article 5 Reads 1 Citation A Low-Power and In Situ Annealing Technique for the Recovery of Active Devices After Proton Irradiation Laurent A. Francis, Amor Sedki, Nicolas André, Valéria Kilch... Published: 10 January 2018
EPJ Web of Conferences, doi: 10.1051/epjconf/201817001006
DOI See at publisher website
Article 0 Reads 2 Citations An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications † Mohtashim Mansoor, Ibraheem Haneef, Suhail Akhtar, Muhammad ... Published: 04 November 2016
Sensors, doi: 10.3390/s16111608
DOI See at publisher website PubMed View at PubMed ABS Show/hide abstract
An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dynamics. The chip contains ten thermodiodes (temperature sensors), a piezoresistive-type pressure sensor and nine hot film-based flow rate sensors fabricated within the oxide layer of the SOI wafers. The silicon dioxide layers with embedded sensors are relieved from the substrate as membranes with the help of a single DRIE step after chip fabrication from a commercial CMOS foundry. Very dense sensor packing per unit area of the chip has been enabled by using technologies/processes like SOI, CMOS and DRIE. Independent apparatuses were used for the characterization of each sensor. With a drive current of 10 µA–0.1 µA, the thermodiodes exhibited sensitivities of 1.41 mV/°C–1.79 mV/°C in the range 20–300 °C. The sensitivity of the pressure sensor was 0.0686 mV/(Vexcit kPa) with a non-linearity of 0.25% between 0 and 69 kPa above ambient pressure. Packaged in a micro-channel, the flow rate sensor has a linearized sensitivity of 17.3 mV/(L/min)−0.1 in the tested range of 0–4.7 L/min. The multi-sensor chip can be used for simultaneous measurement of fluid pressure, temperature and flow rate in fluidic experiments and aerospace/automotive/biomedical/process industries.
Article 2 Reads 1 Citation Low Power Resistive Oxygen Sensor Based on Sonochemical SrTi0.6Fe0.4O2.8 (STFO40) Alisa Stratulat, Bogdan-Catalin Serban, Andrea De Luca, Vior... Published: 20 July 2015
Sensors, doi: 10.3390/s150717495
DOI See at publisher website PubMed View at PubMed ABS Show/hide abstract
The current paper reports on a sonochemical synthesis method for manufacturing nanostructured (typical grain size of 50 nm) SrTi0.6Fe0.4O2.8 (Sono-STFO40) powder. This powder is characterized using X ray-diffraction (XRD), Mössbauer spectroscopy and Scanning Electron Microscopy (SEM), and results are compared with commercially available SrTi0.4Fe0.6O2.8 (STFO60) powder. In order to manufacture resistive oxygen sensors, both Sono-STFO40 and STFO60 are deposited, by dip-pen nanolithography (DPN) method, on an SOI (Silicon-on-Insulator) micro-hotplate, employing a tungsten heater embedded within a dielectric membrane. Oxygen detection tests are performed in both dry (RH = 0%) and humid (RH = 60%) nitrogen atmosphere, varying oxygen concentrations between 1% and 16% (v/v), at a constant heater temperature of 650 °C. The oxygen sensor, based on the Sono-STFO40 sensing layer, shows good sensitivity, low power consumption (80 mW), and short response time (25 s). These performance are comparable to those exhibited by state-of-the-art O2 sensors based on STFO60, thus proving Sono-STFO40 to be a material suitable for oxygen detection in harsh environments.
PROCEEDINGS-ARTICLE 0 Reads 0 Citations The effects of gamma irradiation on micro-hotplates with integrated temperature sensing diodes Laurent A. Francis, Nicolas Andre, El Hafed Boufouss, Pierre... Published: 04 June 2014
SPIE Sensing Technology + Applications, doi: 10.1117/12.2050734
DOI See at publisher website
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