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Massimo Macucci  - - - 
Top co-authors
Ivo Cacelli

42 shared publications

Istituto di Chimica dei Composti OrganoMetallici (ICCOM-CNR), Area della Ricerca, Via G. Moruzzi 1, I-56124 Pisa, Italy

B. Tellini

36 shared publications

Department of Energy, Systems, Land and Constructions Engineering, University of Pisa, Pisa, Italy

Alessandro Ferretti

22 shared publications

Istituto di Chimica dei Composti Organometallici (ICCOM-CNR)

M. Marracci

2 shared publications

M. Agostinelli

1 shared publications

141
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Publication Record
Distribution of Articles published per year 
(1989 - 2016)
Total number of journals
published in
 
22
 
Publications See all
Article 0 Reads 0 Citations All-2D Material Inkjet-Printed Capacitors: Toward Fully Printed Integrated Circuits. Robyn Worsley, Lorenzo Pimpolari, Daryl McManus, Ning Ge, Ro... Published: 27 November 2018
ACS Nano, doi: 10.1021/acsnano.8b06464
DOI See at publisher website PubMed View at PubMed
PROCEEDINGS-ARTICLE 0 Reads 0 Citations Wireless Charging for Marine Application Mirko Marracci, Bernardo Tellini, Paolo Marconcini, Edoardo ... Published: 01 September 2018
2018 IEEE 4th International Forum on Research and Technology for Society and Industry (RTSI), doi: 10.1109/rtsi.2018.8548417
DOI See at publisher website
Article 0 Reads 0 Citations A tight binding and \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepa... Liming Jiang, Paolo Marconcini, Md Sharafat Hossian, Wanzhi ... Published: 21 September 2017
Scientific Reports, doi: 10.1038/s41598-017-12281-y
DOI See at publisher website PubMed View at PubMed ABS Show/hide abstract
Stanene is a single layer of tin atoms which has been discovered as an emerging material for quantum spin Hall related applications. In this paper, we present an accurate tight-binding model for single layer stanene near the Fermi level. We parameterized the onsite and hopping energies for the nearest, second nearest, and third nearest neighbor tight-binding method, both without and with spin orbital coupling. We derived the analytical solution for the \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\overrightarrow{{\boldsymbol{\Gamma }}}$$\end{document}Γ→and \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\overrightarrow{{\boldsymbol{K}}}$$\end{document}K→ points and numerically investigated the buckling effect on the material electronic properties. In these points of the reciprocal space, we also discuss a corresponding \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\overrightarrow{{\boldsymbol{k}}}\cdot \overrightarrow{{\boldsymbol{p}}}$$\end{document}k→⋅p→ description, obtaining the value of the \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\overrightarrow{{\boldsymbol{k}}}\cdot \overrightarrow{{\boldsymbol{p}}}$$\end{document}k→⋅p→ parameters both analytically from the tight-binding ones, and numerically, fitting the ab-initio dispersion relations. Our models provide a foundation for large scale atomistic device transport calculations.
Article 0 Reads 0 Citations On current transients in MoS2 Field Effect Transistors Massimo Macucci, Gerry Tambellini, Dmitry Ovchinnikov, Andra... Published: 14 September 2017
Scientific Reports, doi: 10.1038/s41598-017-11930-6
DOI See at publisher website PubMed View at PubMed ABS Show/hide abstract
We present an experimental investigation of slow transients in the gate and drain currents of MoS2-based transistors. We focus on the measurement of both the gate and drain currents and, from the comparative analysis of the current transients, we conclude that there are at least two independent trapping mechanisms: trapping of charges in the silicon oxide substrate, occurring with time constants of the order of tens of seconds and involving charge motion orthogonal to the MoS2 sheet, and trapping at the channel surface, which occurs with much longer time constants, in particular when the device is in a vacuum. We observe that the presence of such slow phenomena makes it very difficult to perform reliable low-frequency noise measurements, requiring a stable and repeatable steady-state bias point condition, and may explain the sometimes contradictory results that can be found in the literature about the dependence of the flicker noise power spectral density on gate bias.
Article 0 Reads 3 Citations Envelope-Function-Based Transport Simulation of a Graphene Ribbon With an Antidot Lattice Massimo Macucci, Paolo Marconcini Published: 01 July 2017
IEEE Transactions On Nanotechnology, doi: 10.1109/TNANO.2016.2645663
DOI See at publisher website
Article 0 Reads 51 Citations Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures Daryl McManus, Sandra Vranic, Freddie Withers, Veronica Sanc... Published: 30 January 2017
Nature Nanotechnology, doi: 10.1038/nnano.2016.281
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