Carrier mobility in semiconductors at very low temperatures

Carrier mobilities and concentrations were measured for different p- and n-type silicon materials in the temperature range 0.3–300 K. Simulations show that experimentally determined carrier mobilities are best described in this temperature range by Klaassen´s model. Freeze out reduce the carrier concentration with decreasing temperature. Freeze out, however, depends on the dopant type and initial concentration. Semi-classical calculations are useful only for temperatures above 100 K. Otherwise quantum mechanical calculations are required.