Events2024 International Conference on Science and Engineering of Electronics (ICSEE'2024)
Published
This submission belongs to the session S5. Nanotechnology Electronics of the event 2024 International Conference on Science and Engineering of Electronics (ICSEE'2024)
Published date
25 Nov, 2024
Academic Editor
author-avatarYing Tan
Citation
Qingqing Ji, Engineering Hysteresis in MoS<sub>2</sub> Transistors, in Proceedings of 2024 International Conference on Science and Engineering of Electronics (ICSEE'2024), Wuhan, 22 November–26 November 2024, MDPI: Basel, Switzerland
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Engineering Hysteresis in MoS2 Transistors

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1. School of Physical Science and Technology, ShanghaiTech University
Abstract
Keywords
2D semiconductors
transistors
hysteresis
charge storage