EventsThe 11th International Electronic Conference on Sensors and Applications
Published
This submission belongs to the session S3. Sensor Networks, IoT, Smart Cities and Heath Monitoring of the event The 11th International Electronic Conference on Sensors and Applications
Published date
26 Nov, 2024
Academic Editor
author-avatarStefan Bosse
Citation
Yuying Liang, Jie Cui, High OIP3 Low Noise Amplifier Design Based on 0.13μm CMOS Process for High-Precision Sensors, in Proceedings of The 11th International Electronic Conference on Sensors and Applications, 26 November–28 November 2024, MDPI: Basel, Switzerland, doi: 10.3390/ecsa-11-20465
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High OIP3 Low Noise Amplifier Design Based on 0.13μm CMOS Process for High-Precision Sensors

1. School of Microelectronics (School of Integrated Circuits),Nanjing University of Science and Technology, China
2. School of Electronic and Optical Engineering, Nanjing University of Science and Technology, China
Abstract

Low Noise Amplifiers (LNAs) play a pivotal role in advancing sensor networks, IoT (Internet of Things), smart cities, and health monitoring systems. In the context of microwave sensors employed for detection, ranging, and communication within these domains, LNAs are crucial for ensuring reliable and accurate data transmission. These sensors, widely deployed in smart city infrastructure, IoT devices, and health monitoring systems, require exceptional environmental adaptability, particularly to varying temperature conditions, to ensure uninterrupted operation.Moreover, heightened sensitivity is imperative for capturing weak signals in dense urban environments or within the human body for health monitoring. By incorporating temperature- and process-insensitive LNAs with high Output Third-Order Intercept Point (OIP3) into the receiving systems of these microwave sensors, we can significantly enhance their sensitivity, enabling more precise data capture across diverse environments.This study proposes a highly linear LNA design, impervious to process and temperature variations, tailored specifically for sensor networks, IoT, smart cities, and health monitoring applications. The circuit's linearity is bolstered through derivative superposition technology, while an on-chip active bias circuit dynamically stabilizes the transconductance of the common-source transistor, mitigating IIP3 fluctuations due to process and temperature changes.Simulated using a 0.13μm CMOS process from DongBu High-Tech at the post-layout level, this LNA demonstrates exceptional performance with a 33.9dBm OIP3, operating efficiently at 42mW from a 2.8V supply. It achieves a stable gain of 16 dB, a low noise figure of 0.91dB, and excellent input/output return losses of less than -8 dB and -10 dB, respectively. This technology advancement fosters large-scale integration, empowering sensor networks, IoT devices, smart cities, and health monitoring systems to function seamlessly and reliably in the most challenging of environments.

Keywords
high-precision sensor,derivative superposition
linearity improvement
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