This submission belongs to the session Session 4. Session 4 of the event The 18th Advanced Infrared Technology and Applications (AITA2025)
Published date
29 Aug, 2025
Academic Editor
Hirotsugu Inoue
Citation
Jarosław Pawluczyk, Passivation of MWIR heterostructure p-InAsSbP/n-InAs photodiodes using SiO<sub>2</sub> layers for near-room-temperature operation, in Proceedings of The 18th Advanced Infrared Technology and Applications (AITA2025), Kobe, Hyogo, 15 September–19 September 2025, MDPI: Basel, Switzerland
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Passivation of MWIR heterostructure p-InAsSbP/n-InAs photodiodes using SiO2 layers for near-room-temperature operation