Dielectric and Structural Optimization of Silicon Carbide/Polystyrene Composites for Mechatronic Applications

Silicon carbide/polystyrene composites with SiC contents of 1–10 wt% were developed to evaluate their potential as multifunctional materials for mechatronic and electromechatronic components, such as high-precision sensor substrates, dielectric layers for micro-actuators, and EMI-shielding elements. In such systems, materials with tunable permittivity and structural stability are essential in ensuring reliable signal conditioning and stable operation under alternating electromagnetic fields. Structural investigations by SEM and XRD confirmed that highly crystalline \beta-SiC particles (3–15 μm) are successfully dispersed within the amorphous PS matrix. Williamson–Hall analysis revealed that the 7 wt% composite exhibits the largest crystallite size (≈30.23 nm) and the lowest microstrain. This enhanced structural uniformity is critical in maintaining the mechanical integrity of mechatronic assemblies subjected to operational vibrations and thermal cycling. Dielectric spectroscopy showed a systematic increase in permittivity with SiC concentration, attributed to Maxwell–Wagner–Sillars interfacial polarization. This behavior is specifically analyzed in the context of electromechatronic interfaces, where controlled charge accumulation influences insulation performance and signal transmission stability. UV–Vis and FTIR analyses confirmed the chemical stability and improved structural uniformity of the composites. The results demonstrate that SiC/PS composites offer a tunable platform for advanced mechatronic applications, providing the necessary balance between dielectric performance and structural reliability for integrated robotic and electronic systems.