EventsThe 5th International Online Conference on Crystals
Published
This submission belongs to the session S5. Materials for Energy Applications of the event The 5th International Online Conference on Crystals
Published date
10 Jun, 2026
Academic Editor
author-avatarAlessandra Toncelli
Citation
Sopheap Sam, Kosuke Yamazaki, Hiroshi Nakatsugawa, Solubility of Metals in Semiconductors: Insights from Iron Silicide System, in Proceedings of The 5th International Online Conference on Crystals, 15 June–17 June 2026, MDPI: Basel, Switzerland
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Solubility of Metals in Semiconductors: Insights from Iron Silicide System

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Kosuke Yamazaki 3
1. Department of Industrial and Mechanical Engineering, Faculty of Electrical Engineering, Institute of Technology of Cambodia, Russian Federation Blvd, P.O. Box 86, Phnom Penh 120404, Cambodia, Cambodia
2. Research and Innovation Center, Institute of Technology of Cambodia, Russian Federation Blvd, P.O. Box 86, Phnom Penh 120404, Cambodia
3. Graduate School of Engineering Science, Yokohama National University, 79-5 Tokiwadai, Hodogaya, Yokohama, Kanagawa 240-8501, Japan, Japan
Abstract

Iron silicide is an earth-abundant and environmentally friendly material system that crystallizes in several phases, including metallic ε-FeSi and α-Fe2Si5, and semiconducting β-FeSi2. Among them, β-FeSi2 has attracted considerable interest for optoelectronic, photovoltaic, and thermoelectric applications due to its tunable electrical conductivity. Both n-type and p-type conduction can be achieved through transition-metal doping; however, performance optimization is often limited by dopant solubility and the emergence of secondary metallic phases. Previous studies mainly inferred solubility limits from lattice parameter shifts or qualitative phase identification, with a lack of quantitatively correlating bulk phase fractions and local elemental distribution.

Polycrystalline Fe1xMxSi2 (M = Mn, Co, Ni) samples were prepared by arc melting followed by a two-step heat treatment to promote the formation of the β phase. Dopant concentrations were systematically varied within controlled ranges. Phase identification and quantitative analysis were performed using X-ray diffraction combined with Rietveld refinement, while microstructure and elemental distributions were examined by SEM-EDS at multiple locations to evaluate reproducibility and local dopant incorporation.

The evolution of phase fractions reveals that increasing dopant concentration promotes the formation of metallic ε and α-phases. Although the β-phase remains dominant (>95%) over a finite composition range, local compositional analysis indicates earlier saturation of dopant incorporation within the β-matrix. The estimated solid-solution limits are approximately 6.3% for Mn and 8.8% for Co, while Ni exhibits significantly lower solubility. Beyond these limits, excess dopants segregate and contribute to metallic phase formation, which correlates with degradation in thermoelectric performance. The combined bulk and local analyses provide a practical strategy to evaluate dopant solubility and phase stability in β-FeSi2, offering guidance for optimizing transition-metal doping in semiconductor-based energy materials.

Keywords
Solid solution
Semiconductor
Iron silicide
Thermoelectrics
Phase transition
Poster
Poster-dopant-solubility-semiconductor-R1.pdf
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