Parameter Estimation of Two Different Metal–Semiconductor-Based Devices Using the Secretary Bird Optimization Algorithm

The Schottky diode is a fundamental electronic component widely used in high-speed switching, power electronics, and sensing applications. Its performance and reliability are strongly influenced by the accurate estimation of its intrinsic parameters, making parameter extraction a critical step in device characterization and modeling. However, determining these parameters is a challenging optimization problem due to the nonlinear relationship between the diode parameters and the measured current-voltage (I-V) characteristics. Conventional deterministic and gradient-based optimization methods often suffer from premature convergence and sensitivity to initial conditions, which can lead to inaccurate parameter estimation and entrapment in local optima. To address these limitations, this paper investigates the application of the Secretary Bird Optimization Algorithm (SBOA), a recently developed metaheuristic optimization technique, for the extraction of key Schottky diode parameters, namely the barrier height, ideality factor, and series resistance, in both metal-semiconductor (MS) and metal-insulator-semiconductor (MIS) structures. Using experimental I-V characterization data, the proposed approach begins with a randomly initialized population and iteratively minimizes the discrepancy between measured and simulated I-V curves generated from the extracted parameters. The obtained results demonstrate the effectiveness of SBOA in accurately identifying Schottky diode parameters, providing improved convergence behavior, robustness, and estimation accuracy compared with conventional optimization approaches.