Events The 3rd International Electronic Conference on Materials

Event submissions

Published

10.3390/ecms2018-05242

This submission belongs to the session A. Materials Characterization of the event The 3rd International Electronic Conference on Materials

Published date

21 May, 2018

Citation

Walter Giurlani, Andrea Giaccherini, Stefano Caporali, Emanuele Salvietti, Maurizio Passaponti, Massimo Innocenti, Giovanni Zangari, Nicola Calisi, Investigations on the Electrochemical Atomic Layer Growth of Bi₂Se₃ and the Surface Limited Deposition of Bismuth at Silver Electrode, in Proceedings of The 3rd International Electronic Conference on Materials, 14 May–28 May 2018, MDPI: Basel, Switzerland, doi: 10.3390/ecms2018-05242

Facebook

Twitter

Investigations on the Electrochemical Atomic Layer Growth of Bi₂Se₃ and the Surface Limited Deposition of Bismuth at Silver Electrode

Walter Giurlani ^1,2

Andrea Giaccherini ^1,2

Nicola Calisi ^3,4

Giovanni Zangari ⁵

Emanuele Salvietti ^2,6

Maurizio Passaponti ^1,2

Stefano Caporali ^1,2

Massimo Innocenti ^1,2,7

1. Department of Chemistry, Università degli Studi di Firenze, via della Lastruccia 3, 50019, Sesto Fiorentino (FI), Italy

2. Consorzio Interuniversitario Nazionale per la Scienza e Tecnologia dei Materiali (INSTM), via G. Giusti 9, 50121, Firenze, Italy

3. Dipartimento di Chimica, UNIFI, via della Lastruccia 3, 50019, Sesto Fiorentino (FI), Italy

4. Consorzio Interuniversitario Nazionale per la Scienza e Tecnologia dei Materiali, via G. Giusti 9, 50121, Firenze, Italy

5. Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904, USA

6. Dipartimento di Chimica, University of Florence, via della Lastruccia 3, 50019, Sesto Fiorentino (FI), Italy

7. Dipartimento di Scienze della Terra, UNIFI, via La Pira 4, 50121, Firenze, Italy

Abstract

The Electrochemical Atomic Layer Deposition (E-ALD) technique is used for the deposition of ultrathin film of bismuth (Bi) compounds. Exploiting the E-ALD it was possible to obtain high controlled nanostructured depositions as needed for the application of these materials for novel electronics (topological insulators) and opto-electronics applications. Electrochemical studies have been conducted to determine the Underpotential Deposition (UPD) of Bi on selenium (Se) to obtain the Bi₂Se₃ compound on the Ag (111) electrode. Verifying the composition with the X-ray Photoelectron Spectroscopy (XPS) emerged that, after the first monolayer, the deposition of Se is stopped. Thicker deposits were synthesized exploiting a time-controlled deposition of massive Se. Then we move to discover the optimal conditions to deposit a single monolayer of metallic Bi directly on Ag.

Keywords

Bismuth

bismuth selenide

topological insulator

E-ALD

UPD

Manuscript

sciforum-017004-published version.pdf

Numerical Modelling of Structural Glass Elements under Thermal Exposure

Empirical Model to estimate the Electricity Consumption of the Polymer Material Injection Molding Manufacturing Process

Investigations on the Electrochemical Atomic Layer Growth of Bi2Se3 and the Surface Limited Deposition of Bismuth at Silver Electrode

Investigations on the Electrochemical Atomic Layer Growth of Bi₂Se₃ and the Surface Limited Deposition of Bismuth at Silver Electrode