Events6th International Electronic Conference on Sensors and Applications
Published
This submission belongs to the session A. Chemo- and Biosensors of the event 6th International Electronic Conference on Sensors and Applications
Published date
14 Nov, 2019
Citation
Aleksei Almaev, Evgeny Chernikov, Bogdan Kushnarev, Nikita Yakovlev, Petr Korusenko, Sergey Nesov, Oxygen sensors based on silicon-doped gallium oxide thin films, in Proceedings of 6th International Electronic Conference on Sensors and Applications, 15 November–30 November 2019, MDPI: Basel, Switzerland, doi: 10.3390/ecsa-6-06549
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Oxygen sensors based on silicon-doped gallium oxide thin films

Evgeny Chernikov 2
Bogdan Kushnarev 2
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1. Tomsk State University, Russia
2. Tomsk State University
3. Laboratory of Nanomaterials and Heterostructures, Omsk Scientific Center of Siberian Branch, Russian Academy of Sciences, Omsk 644024, Russia; Department of Solid State Electronics, St. Petersburg State University, Saint Petersburg 198504, Russia
4. Laboratory of Nanomaterials and Heterostructures, Omsk Scientific Center of Siberian Branch, Russian Academy of Sciences, Omsk 644024, Russia;
Abstract

The results of investigation of the electrical resistivity of thin films Ga2O3:Si under the influence of oxygen in the range of O2 from 9 to 100 vol. % and changes in the heating temperature of structures from 25 to 700 °C were presented. Thin films of Ga2O3 were obtained by RF magnetron sputtering. The possibility of developing of oxygen sensors based on thin films Ga2O3:Si with a temperature of maximum response 400 °C was shown. Oxygen influence leads to a reversible increase in the samples’ resistance due to the interaction between adsorbed oxygen particles and superstoichiometric Ga3+ atoms in the semiconductor’s near-surface part. The mechanism of Si influence on gas-sensitive properties of Ga2O3 was offered.

Keywords
Gallium oxide
thin films
RF-magnetron sputtering
oxygen.
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