EventsThe 2nd International Online Conference on Crystals
Event submissions
Published
with-doi10.3390/IOCC_2020-07348
This submission belongs to the session B. Crystalline Materials of the event The 2nd International Online Conference on Crystals
Published date
06 Nov, 2020
Citation
Sujit Bati, Madhav Prasad Ghimire, Dhurba Raj Jaishi, Electronic and Thermoelectric Properties of NiTiSi, in Proceedings of The 2nd International Online Conference on Crystals, 10 November–20 November 2020, MDPI: Basel, Switzerland, doi: 10.3390/IOCC_2020-07348
Share
Email
Facebook
Twitter
LinkedIn

Electronic and Thermoelectric Properties of NiTiSi

Sujit Bati 1,2
Dhurba Raj Jaishi 1,2
image
Madhav Prasad Ghimire 1,2
1. Central Department of Physics, Tribhuvan University, Kirtipur 44613, Kathmandu, Nepal
2. Condensed Matter Physics Research Center, Butwal-11, Rupandehi, Nepal
Abstract

The electronic and thermoelectric properties of half-heusler compound NiTiSi has been studied using density functional theory and Boltzmann transport theory within the constant relaxation time approximation. NiTiSi is found to be an indirect bandgap semiconductor with a band gap of 0.747 eV. Seebeck coefficient greater than 200μV/K at 1000 K is observed. The calculations suggests that p-type doping can significantly improve the thermoelectric properties of the compound with a maximum value of 0.13 at 1000 K.

Keywords
thermoelectric
electronic
half
heusler
Poster
IOCC2020.pdf
IOCC2020.pdf
Topological defects in nematics: fundamentals and applications
Electronic, Magnetic and Optical Properties of Double Perovskites Pb2XOsO6 (X=Co, Ni)