EventsThe 2nd International Online Conference on Nanomaterials
Published
This submission belongs to the session H. Nanophysics, Nanophotonics, Nanoplasmonics, Nanoelectronics and Nanodevices of the event The 2nd International Online Conference on Nanomaterials
Published date
11 Nov, 2020
Citation
Filippo Giubileo, Aniello Pelella, Alessandro Grillo, Enver Faella, Francesca Urban, Antonio Di Bartolomeo, Direct contacting of 2D nanosheets by metallic nanoprobes, in Proceedings of The 2nd International Online Conference on Nanomaterials, 15 November–30 November 2020, MDPI: Basel, Switzerland, doi: 10.3390/IOCN2020-07931
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Direct contacting of 2D nanosheets by metallic nanoprobes

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1. CNR-SPIN Salerno Via Giovanni Paolo II 132, 84084 Fisciano, Salerno, Italy, Italy
2. Physics Department “E. R. Caianiello”, University of Salerno, Via Giovanni Paolo II 132, 84084 Fisciano, Salerno, Italy
3. CNR-SPIN Salerno Via Giovanni Paolo II 132, 84084 Fisciano, Salerno, Italy
Abstract

We present a simple and fast methodology to realize metal contacts on two-dimensional nanosheets. In particular, we perform a complete characterization of the transport properties of MoS2 monolayer flakes on SiO2/Si substrates by using nano-manipulated metallic tips as metallic electrodes directly approached on the flake surface. We report a detailed experimental investigation of transport properties and contact resistance in back-gated field-effect transistor in which the Si substrate is used as the gate electrode. Moreover, profiting from the n-type conduction as well as the high aspect ratio at the edge of the MoS2 flakes, we also explored the possibility to exploit the material as a field emitter. Indeed, by retracting one of the metallic probes (the anode) from the sample surface, it has been possible to switch on a field emitted current by applying a relatively low external electric field of few tens of Volts for cathode-anode separation distance below 1µm. Experimental data are then analyzed in the framework of Fowler-Nordheim theory and its extension to the two-dimensional limit.

Keywords
Transition metal dichalcogenides
molybdenum disulfide
field emission
field-effect transistor
Manuscript
Poster
presentation IOCN 2020 Giubileo Filippo.pdf
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