Single crystals of SnS₂​ were grown using the direct vapor transport (DVT) technique in a dual-zone muffle furnace. Initially, an elemental stoichiometric proportion totaling 10 g was used to prepare the SnS₂​ compound at 550 K for 24 hours. This as-prepared compound was then used for the subsequent growth of single-crystalline SnS₂ ​via the DVT method. The resulting crystals are thin, shining, orange-colored, wafer-like flakes with maximum dimensions of 20 mm × 20 mm × 0.015 mm. The grown crystals were characterized to evaluate their microstructure, optical, and thermal properties. The growth mechanism observed on the as-grown single-crystal surfaces consists of growth layers originating from growth islands. No cracks or pinholes were observed in the grown crystals. Optical absorbance was recorded in the 200 nm to 3500 nm range. The grown SnS₂​ single crystals show high optical absorption between 382 nm and 570 nm. The direct optical bandgap was evaluated using a Tauc plot ((αhν)² versus hν) and was determined to be 2.2 eV. The thermal properties of the grown SnS₂​ single crystals were evaluated in the temperature range of 307 K to 1230 K using thermogravimetric analysis (TGA), differential thermal analysis (DTA), and derivative thermogravimetric (DTG) analysis in an inert N₂​ atmosphere with a heating rate of 5 °C/min, showing a total weight loss of 59.84%. Total decomposition occurred in two distinct steps: the first and second decomposition phases occurred from 855 K to 985.13 K and 1083 K to 1207 K, with weight losses of 14.85% and 40.68%, respectively. Two DTG peaks observed at 948.28 K and 1192.91 K corroborate these thermal decompositions. DTA analysis revealed two peaks at 948.80 K and 1140.67 K with an increase in negative potential, indicating endothermic behavior. Activation energy and other thermodynamic parameters were evaluated and are discussed in detail.