This study focuses on the low-temperature synthesis and characterization of aegirine (NaFeSi₂O₆) to investigate its structural, optical, and electrical properties. FTIR analysis reveals the characteristic vibrational signatures of the pyroxene framework, particularly the Si–O–Si bands (1000–1100 cm⁻¹), bending modes or Si–O–Fe linkages (~700 cm⁻¹), and Fe–O vibrations in the octahedral sites (540 and 470 cm⁻¹), confirming the formation of the crystalline silicate structure. Scanning electron microscopy shows well-crystallized grains with relatively smooth surfaces, indicating satisfactory crystallinity of the synthesized material. UV–Visible spectroscopic analysis performed in the 250–650 nm range reveals absorption bands between 300 and 400 nm, associated with electronic transitions of Fe³⁺ ions located in octahedral coordination sites. The optical band gap energy, estimated to be approximately 3.0 eV using the Tauc method, confirms the semiconductor nature of the synthesized aegirine, supporting its suitability for electronic charge transport processes.
Dielectric measurements conducted over the frequency range of 0.1 Hz to 10⁶ Hz show very high real permittivity values at low frequency (≈1.75×10⁵), followed by a gradual decrease until reaching an almost constant plateau within the 10¹–10⁶ Hz interval, reflecting the dominance of interfacial polarization. The dielectric loss tangent exhibits a relaxation peak of approximately 10, consistent with the Maxwell–Wagner–Sillars relaxation mechanism. Frequency-dependent conductivity remains relatively stable between 10¹ and 10³ Hz and increases at higher frequencies, with a room-temperature conductivity of approximately 1.3×10⁻⁵ S·m⁻¹. Temperature-dependent conductivity measurements (50–200 °C) show non-monotonic values ranging from 3.25×10⁻⁶ to 2.25×10⁻⁶ S·m⁻¹, suggesting thermally assisted charge transport. Nyquist impedance plots exhibit semicircular arcs characteristic of grain-dominated electrical response according to an RC-type equivalent circuit model. The resistance values vary with temperature, decreasing from approximately 2.75×10⁶ Ω at room temperature to 5.5×10⁴ Ω, 5.4×10⁴ Ω, 5.7×10⁴ Ω and 3.5×10⁵ Ω at 50, 100, 150 and 200 °C, respectively. Overall, low-temperature synthesized aegirine exhibits semiconductor behavior and dielectric properties strongly dependent on frequency and temperature, highlighting its potential for silicate based functional materials for electronic and energy applications.