We present a method for targeted and maskless fabrication of single silicon vacancy (V_Si) defect arrays in silicon carbide (SiC) using focused ion beam. Firstly, we studied the photoluminescence (PL) spectrum and optically detected magnetic resonance (ODMR) of the generated defect spin ensemble, confirming that the synthesized centers were in the desired defect state. Then we investigated the fluorescence properties of single V_Si defects and our measurements indicate the presence of a photostable single photon source. Finally, we find that the Si⁺⁺ ion to V_Si defect conversion yield increases as the implanted dose decreases. The reliable production of V_Si defects in silicon carbide could pave the way for its applications in quantum photonics and quantum information processing. The resolution of implanted V_Si defects is limited to a few tens of nanometers, defined by the diameter of the ion beam.