The impact of intense structured laser fields—specifically Gaussian and Bessel beams—on the electronic and optical properties of InAs/GaAs quantum dots is theoretically investigated. The study focuses on two distinct geometries of vertically coupled quantum dots: cylindrical and strongly oblate ellipsoidal structures. Using non-resonant laser excitation, we analyze how spatially structured fields dynamically reshape the effective confinement potential within the quantum dots, leading to significant modifications in the single-particle energy spectrum and carrier localization patterns.

The results reveal that both the symmetry and spatial profile of the incident beam strongly influence the confinement landscape, giving rise to localized potential wells and anisotropic electron distributions. These changes, in turn, affect the optical transitions and excitonic behavior of the system. The linear and nonlinear optical responses are studied in detail, including the modulation of the absorption coefficient, refractive index variations, and the generation of higher harmonics under strong field conditions.

Special emphasis is placed on the response of excitonic complexes, particularly biexcitons, under structured light excitation. Our findings demonstrate that tailored beam configurations provide a viable route for precise, all-optical control of quantum states in semiconductor nanostructures. This opens promising avenues for tunable photonic devices and quantum information processing applications utilizing engineered light–matter interaction at the nanoscale.