We present a method for targeted and maskless fabrication of single silicon vacancy (VSi) defect arrays in silicon carbide (SiC) using focused ion beam. Firstly, we studied the photoluminescence (PL) spectrum and optically detected magnetic resonance (ODMR) of the generated defect spin ensemble, confirming that the synthesized centers were in the desired defect state. Then we investigated the fluorescence properties of single VSi defects and our measurements indicate the presence of a photostable single photon source. Finally, we find that the Si++ ion to VSi defect conversion yield increases as the implanted dose decreases. The reliable production of VSi defects in silicon carbide could pave the way for its applications in quantum photonics and quantum information processing. The resolution of implanted VSi defects is limited to a few tens of nanometers, defined by the diameter of the ion beam.
Previous Article in event
Next Article in event
Scalable fabrication of single silicon vacancy defect arrays in silicon carbide using focused ion beam
Published: 21 July 2017 by MDPI in The 7th International Multidisciplinary Conference on Optofluidics 2017 session Quantum technology and science
Keywords: silicon vacancy defect, arrays, silicon carbide, focused ion beam