Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V-gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS) fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. Here we will review IME’s efforts on the hybrid integration through high-throughput multiple dies-to-wafer (D2W) transfer bonding technology and its application for hybrid silicon laser demonstration. Such bonding technology is a key enabler towards the large-scale heterogeneous integration of optoelectronic integrated circuits (H-OEIC).