Investigations on the Electrochemical Atomic Layer Growth of Bi2Se3 and the Surface Limited Deposition of Bismuth at Silver Electrode

Walter Giurlani; Andrea Giaccherini; Nicola Calisi; Giovanni Zangari; Emanuele Salvietti; Maurizio Passaponti; Stefano Caporali; Massimo Innocenti

doi:10.3390/ecms2018-05242

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Investigations on the Electrochemical Atomic Layer Growth of Bi2Se3 and the Surface Limited Deposition of Bismuth at Silver Electrode

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¹ Department of Chemistry, Università degli Studi di Firenze, via della Lastruccia 3, 50019, Sesto Fiorentino (FI), Italy
² Consorzio Interuniversitario Nazionale per la Scienza e Tecnologia dei Materiali (INSTM), via G. Giusti 9, 50121, Firenze, Italy
³ Dipartimento di Chimica, UNIFI, via della Lastruccia 3, 50019, Sesto Fiorentino (FI), Italy
⁴ Consorzio Interuniversitario Nazionale per la Scienza e Tecnologia dei Materiali, via G. Giusti 9, 50121, Firenze, Italy
⁵ Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904, USA
⁶ Dipartimento di Chimica, University of Florence, via della Lastruccia 3, 50019, Sesto Fiorentino (FI), Italy
⁷ Dipartimento di Scienze della Terra, UNIFI, via La Pira 4, 50121, Firenze, Italy

Published: 21 May 2018 by MDPI in 3rd International Electronic Conference on Materials session Materials Characterization

https://doi.org/10.3390/ecms2018-05242

Abstract:

The Electrochemical Atomic Layer Deposition (E-ALD) technique is used for the deposition of ultrathin film of bismuth (Bi) compounds. Exploiting the E-ALD it was possible to obtain high controlled nanostructured depositions as needed for the application of these materials for novel electronics (topological insulators) and opto-electronics applications. Electrochemical studies have been conducted to determine the Underpotential Deposition (UPD) of Bi on selenium (Se) to obtain the Bi₂Se₃ compound on the Ag (111) electrode. Verifying the composition with the X-ray Photoelectron Spectroscopy (XPS) emerged that, after the first monolayer, the deposition of Se is stopped. Thicker deposits were synthesized exploiting a time-controlled deposition of massive Se. Then we move to discover the optimal conditions to deposit a single monolayer of metallic Bi directly on Ag.

Keywords: Bismuth; bismuth selenide; topological insulator; E-ALD; UPD

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