Oxygen sensors based on silicon-doped gallium oxide thin films

¹ Tomsk State University
² Laboratory of Nanomaterials and Heterostructures, Omsk Scientific Center of Siberian Branch, Russian Academy of Sciences, Omsk 644024, Russia; Department of Solid State Electronics, St. Petersburg State University, Saint Petersburg 198504, Russia
³ Laboratory of Nanomaterials and Heterostructures, Omsk Scientific Center of Siberian Branch, Russian Academy of Sciences, Omsk 644024, Russia;

Published: 14 November 2019 by MDPI in 6th International Electronic Conference on Sensors and Applications session Chemo- and Biosensors

https://doi.org/10.3390/ecsa-6-06549

Abstract:

The results of investigation of the electrical resistivity of thin films Ga₂O₃:Si under the influence of oxygen in the range of O₂ from 9 to 100 vol. % and changes in the heating temperature of structures from 25 to 700 °C were presented. Thin films of Ga₂O₃ were obtained by RF magnetron sputtering. The possibility of developing of oxygen sensors based on thin films Ga₂O₃:Si with a temperature of maximum response 400 °C was shown. Oxygen influence leads to a reversible increase in the samples’ resistance due to the interaction between adsorbed oxygen particles and superstoichiometric Ga³⁺ atoms in the semiconductor’s near-surface part. The mechanism of Si influence on gas-sensitive properties of Ga₂O₃ was offered.

Keywords: Gallium oxide; thin films; RF-magnetron sputtering; oxygen.

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