The results of investigation of the electrical resistivity of thin films Ga2O3:Si under the influence of oxygen in the range of O2 from 9 to 100 vol. % and changes in the heating temperature of structures from 25 to 700 °C were presented. Thin films of Ga2O3 were obtained by RF magnetron sputtering. The possibility of developing of oxygen sensors based on thin films Ga2O3:Si with a temperature of maximum response 400 °C was shown. Oxygen influence leads to a reversible increase in the samples’ resistance due to the interaction between adsorbed oxygen particles and superstoichiometric Ga3+ atoms in the semiconductor’s near-surface part. The mechanism of Si influence on gas-sensitive properties of Ga2O3 was offered.
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Oxygen sensors based on silicon-doped gallium oxide thin films
Published: 14 November 2019 by MDPI in 6th International Electronic Conference on Sensors and Applications session Chemo- and Biosensors
Keywords: Gallium oxide; thin films; RF-magnetron sputtering; oxygen.