Please login first
Oxygen sensors based on silicon-doped gallium oxide thin films
* 1 , 1 , 1 , 1 , 2 , 3
1  Tomsk State University
2  Laboratory of Nanomaterials and Heterostructures, Omsk Scientific Center of Siberian Branch, Russian Academy of Sciences, Omsk 644024, Russia; Department of Solid State Electronics, St. Petersburg State University, Saint Petersburg 198504, Russia
3  Laboratory of Nanomaterials and Heterostructures, Omsk Scientific Center of Siberian Branch, Russian Academy of Sciences, Omsk 644024, Russia;

Abstract:

The results of investigation of the electrical resistivity of thin films Ga2O3:Si under the influence of oxygen in the range of O2 from 9 to 100 vol. % and changes in the heating temperature of structures from 25 to 700 °C were presented. Thin films of Ga2O3 were obtained by RF magnetron sputtering. The possibility of developing of oxygen sensors based on thin films Ga2O3:Si with a temperature of maximum response 400 °C was shown. Oxygen influence leads to a reversible increase in the samples’ resistance due to the interaction between adsorbed oxygen particles and superstoichiometric Ga3+ atoms in the semiconductor’s near-surface part. The mechanism of Si influence on gas-sensitive properties of Ga2O3 was offered.

Keywords: Gallium oxide; thin films; RF-magnetron sputtering; oxygen.
Top