Please login first
Electronic and Thermoelectric Properties of NiTiSi
, , *
1  Central Department of Physics, Tribhuvan University, Kirtipur 44613, Kathmandu, Nepal
2  Condensed Matter Physics Research Center, Butwal-11, Rupandehi, Nepal

Published: 06 November 2020 by MDPI in The 2nd International Online Conference on Crystals session Crystalline Materials
Abstract:

The electronic and thermoelectric properties of half-heusler compound NiTiSi has been studied using density functional theory and Boltzmann transport theory within the constant relaxation time approximation. NiTiSi is found to be an indirect bandgap semiconductor with a band gap of 0.747 eV. Seebeck coefficient greater than 200μV/K at 1000 K is observed. The calculations suggests that p-type doping can significantly improve the thermoelectric properties of the compound with a maximum value of 0.13 at 1000 K.

Keywords: thermoelectric, electronic, half, heusler
Top