Multi-layer titanium nitride/titanium aluminium nitride film growth was simulated by means of kinetic Monte Carlo code NASCAM [1]. Results of the simulation were compared to experimental data [2]. Film growth was simulated for different number of bi-layers TiN/TiAlN, with the number of bi-layers equals from 5 to 100. The total thickness of the whole stack was the same for all samples. That means that the thickness of bi-layers became smaller with the increase of bi-layer numbers.

Calculation of the thermal conductivity of simulated multi-layer film was conducted in two steps. Firstly, the thermal conductivity of the single layer was calculated by using Landauer relation based on effective medium theory [3]. Secondly, the thermal conductivity of the whole stack was calculated taking into account as the termal resistance of all the single layers TiN or TiAlN as well as the thermal resistance of the interfaces between the TiN/TiAlN layers.

Simulation results were compared to the experimental data and to the results of the calculation by means of the equation given above and it was found the perfect agreement between all the data.

[1] https://www.unamur.be/sciences/physique/ur/larn/logiciels/nascam

[2] M.K. Samani et al, Thermal conductivity of titanium nitride/titanium aluminum nitride multilayer coatings deposited by lateral rotating cathode arc, Thin Solid Films 578 (2015) 133–138).

[3] R. Landauer, The electrical resistance of binary metallic mixtures, J. Appl. Phys. 23, 779-784, 1952