Bio
Prof. Dr. Ray-Hua Horng is an active scientist in the field of crystal growth. She has introduced outstanding innovations to the process of the fabrication of high-performance LEDs and solar cells based on III-V quaternary semiconductors materials, III-V nitrides, and wide-bandgap oxide materials covering all the aspects of development, from material growth and characterization to device design and fabrication. Prof. Horng also has a remarkable record of publications, over 400 papers on SCI Journals and 500 papers in Conference Proceedings, and a rich portfolio of patents, about 155 (25 US and 130 domestic), of which 40 are licensed to Companies. Dr. Horng obtained numerous awards recognizing her work on high-brightness LEDs. She has been awarded by the Ministry of Education of Taiwan for Industry/ University Corporation Project in 2002, by the Ministry of Science & Technology of Taiwan for the excellent technology transfer of high-power LEDs in 2006, 2008, 2009, 2010, and 2011, by Chi Mei Optoelectronics for the first prize of Chi Mei Award in 2008, and by the 2007 IEEE Region 10 Academia-Industry Partnership Award and the distinguished research award of National Science Council of Taiwan in 2013 and 2021. She became a Fellow of the Australian Institute of Energy since 2012, a Fellow of the Institution of Engineering and Technology since 2013, a Fellow of SPIE since 2014, a Fellow of IEEE since 2015, a Fellow of OSA since 2016, and a Fellow of IoP since 2019.

Talk
Recent Progress in Wide Bandgap Semiconductor Power Devices - From mobile phones and computers to electric vehicles and solar panels, power electronic devices are ubiquitous. At the core of power electronics are power semiconductor devices, which dominate the efficiency and operating speed of energy conversion. Traditional silicon-based power semiconductors are limited by their material properties, resulting in significant bottlenecks in energy conversion efficiency and operating frequency. In recent years, gallium nitride (GaN), silicon carbide (SiC), and gallium oxide (GaO) semiconductor materials have attracted significant attention. Due to their superior material properties, they can greatly enhance energy conversion efficiency and operating frequency, leading to their increasing application in fast charging and electric vehicles. This talk will introduce the material properties of GaN/SiC/GaO semiconductors and provide an overview of the recent progress in GaN/SiC/GaO power devices.

Bio
Prof. Tian-Li Wu received his Ph.D. degree in electrical engineering from KU Leuven, Belgium, in 2016. From 2011 to 2017, he was with the GaN Power Device Group, imec, Belgium, where he focused on the research and development of CMOS- compatible 200 mm GaN-on-Si platforms for power switching applications and the investigation of reliability issues in GaN power devices. In 2016, he visited the IBM Research, New York, NY, USA, where he focused on interface characterization in sub-10 nm SiGe pMOS FinFETs. He is currently an Associate Professor with the Institute of Electronics, National Yang Ming Chiao Tung University, Taiwan, and was named the MediaTek Junior Chair Professor in 2017. He has authored and coauthored more than 100 publications in peer-reviewed journals or conferences. His research interests include GaN/SiC/GaO power semiconductor and electronics, advanced semiconductor materials and devices for emerging memory and sub-5 nm logic, reliability evaluation and degradation mechanism analysis, and AI-assisted semiconductor device design and reliability predictions. He has served on the IEEE EDS Technical Committees on Compound Semiconductor Devices & Circuits since 2023.

Talk
Impedance Spectroscopy and Its Implications for Studying Radiation Damage - Impedance spectroscopy is a well-established technique for investigating diffusion processes, generation and recombination phenomena, and charge transfer reactions. It is widely used in electrochemistry, particularly in studies of corrosion, energy storage (e.g., solar cells and batteries), and sensing applications. In this presentation, I will discuss the effects of radiation damage on silicon pn junctions observed using impedance spectroscopy. To this aim, four samples of silicon diodes were exposed to high doses of 60Co gamma rays at the CC60 facility at CERN, Geneva. The observed differences in the impedance spectroscopy plots before and after irradiation will be discussed , by considering the impact of radiation on the electrical properties of the diodes and solid-state sensors.

Bio
Dr. Pierluigi Casolaro received a Ph.D. in physics and has held positions at the Italian National Institute for Nuclear Physics (INFN), the University of Bern in Switzerland, and at Gran Sasso Science Institute (GSSI) in Italy. Currently, he is an Assistant Professor at the Department of Physics of the University of Naples Federico II, where he is working on the characterization of electronic devices and materials, including novel semiconductors and new technology for semiconductor devices.