Carrier mobilities and concentrations were measured for different p- and n-type silicon materials in the temperature range 0.3–300 K. Simulations show that experimentally determined carrier mobilities are best described in this temperature range by Klaassen´s model. Freeze out reduce the carrier concentration with decreasing temperature. Freeze out, however, depends on the dopant type and initial concentration. Semi-classical calculations are useful only for temperatures above 100 K. Otherwise quantum mechanical calculations are required.
Carrier mobility in semiconductors at very low temperatures
Published: 17 May 2021 by MDPI in 8th International Symposium on Sensor Science session Physical Sensors
10.3390/I3S2021Dresden-10086 (registering DOI)
Keywords: silicon; carrier mobility; carrier concentration; low-temperature measurements