Please login first

Carrier mobility in semiconductors at very low temperatures
Ingo Tobehn-Steinhäuser * 1 , Manfred Reiche 1 , Matthias​ Schmelz 2 , Ronny​ Stolz 2 , Thomas Fröhlich 3 , Thomas Ortlepp 1
1  CIS Forschungsinstitut für Mikrosensorik GmbH, Konrad-Zuse-Str. 14, D-99099 Erfurt, Germany
2  Leibniz-Institut für Photonische Technologien, Albert-Einstein-Str. 9, D-07745 Jena, Germany
3  Technische Universität Ilmenau, Institut für Prozessmess- und Sensortechnik, Ehrenbergstr. 29, D-98693 Ilmenau, Germany

Published: 17 May 2021 by MDPI in 8th International Symposium on Sensor Science session Physical Sensors
10.3390/I3S2021Dresden-10086 (registering DOI)

Carrier mobilities and concentrations were measured for different p- and n-type silicon materials in the temperature range 0.3–300 K. Simulations show that experimentally determined carrier mobilities are best described in this temperature range by Klaassen´s model. Freeze out reduce the carrier concentration with decreasing temperature. Freeze out, however, depends on the dopant type and initial concentration. Semi-classical calculations are useful only for temperatures above 100 K. Otherwise quantum mechanical calculations are required.

Keywords: silicon; carrier mobility; carrier concentration; low-temperature measurements