Carrier mobility in semiconductors at very low temperatures

¹ CIS Forschungsinstitut für Mikrosensorik GmbH, Konrad-Zuse-Str. 14, D-99099 Erfurt, Germany
² Leibniz-Institut für Photonische Technologien, Albert-Einstein-Str. 9, D-07745 Jena, Germany
³ Technische Universität Ilmenau, Institut für Prozessmess- und Sensortechnik, Ehrenbergstr. 29, D-98693 Ilmenau, Germany

Published: 17 May 2021 by MDPI in 8th International Symposium on Sensor Science session Physical Sensors

https://doi.org/10.3390/I3S2021Dresden-10086 (registering DOI)

Abstract:

Carrier mobilities and concentrations were measured for different p- and n-type silicon materials in the temperature range 0.3–300 K. Simulations show that experimentally determined carrier mobilities are best described in this temperature range by Klaassen´s model. Freeze out reduce the carrier concentration with decreasing temperature. Freeze out, however, depends on the dopant type and initial concentration. Semi-classical calculations are useful only for temperatures above 100 K. Otherwise quantum mechanical calculations are required.

Keywords: silicon; carrier mobility; carrier concentration; low-temperature measurements

View paper View Poster

65 Reads
0 Recommendations

Ingo Tobehn-Steinhäuser

Manfred Reiche

Matthias Schmelz

Ronny Stolz

Thomas Fröhlich

Thomas Ortlepp