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A study of visible-blind properties of a SnO2’s nanowires network photodetector
Estacio Paiva de Araujo * , Adryelle N. Arantes, Ivani M. Costa, Adenilson J. Chiquito
1  NanOLaB, Departamento de Física, Universidade Federal de São Carlos—UFSCar, Rodovia Washington Luiz, Km 235 Monjolinho, CP 676, CEP 13565-905 São Carlos, SP, Brazil

Published: 17 May 2021 by MDPI in 8th International Symposium on Sensor Science session Physical Sensors
10.3390/I3S2021Dresden-10149 (registering DOI)
Abstract:

We developed a SnO2 nanowire network visible-blind ultraviolet (UV) photodetector for applications in fields such as safety systems, exposure control, decontamination processes, among others. Based on the vapor-liquid-solid (VLS) growth method, a SnO2 nanowire network was synthetized. The sensor was fabricated based on a metal-semicondutor-metal (MSM) structure and Ag paste was used as simple and efficient electrical contact. To understand the visible-blind property two light sources were used: UV (254-365 nm) and VIS (400-900 nm) Lamps. In Current – Voltage measurements, the device under dark and room ambient conditions presented rectifier contacts with different barrier heights; whereas under UV illumination, the barrier heights seem to be aligned. It was observed that the sensor’s photoresponse was optimized for UV Light with rise and decay time ~1s and 3s, respectively, and exhibiting an on/off ratio of 42.5; whereas as for the VIS light both times were longer with an on/off ratio of 1.7, both under V = + 0.1 V. These results are highly significant for developing of a visible-blind photodetector.

Keywords: Tin Oxide; nanowire network; visible-blind; MSM photodetector
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