Gallium nitride (GaN) and other III-nitride semiconductors have the advantages of continuous adjustable direct bandgap from near-infrared to deep-ultraviolet, strong polarization, high breakdown field strength, fast electron saturated drift velocity, and high power density. They have excellent performance in visible light and ultraviolet light LEDs and laser diodes, as well as power electronics and RF devices. Due to the price and size limitation of III-nitride substrates, heterogeneous epitaxial III-nitride materials on silicon, sapphire and SiC substrates of III-nitride materials has attracted attention from the industry.
This report focuses on the key technologies for large-size silicon-based III-nitride epitaxy. The 8-inch silicon-based GaN HEMT epitaxial wafers grown using metal-organic chemical vapor deposition (MOCVD) demonstrate industry-leading vertical breakdown voltages. Furthermore, to enhance the RF device performance of 8-inch Si-based GaN epitaxial wafers, we developed a large-size AlN-on-Si template epitaxial process utilizing molecular beam epitaxy (MBE). By employing MBE technical advantages such as lower growth temperature, we successfully mitigated the formation of parasitic conductive layers at the AlN/Si interface, thereby decreasing RF loss. Finally, we provide a brief overview of efforts undertaken by Hubei JFS Laboratory regarding n+ GaN regrowth, as well as other compound semiconductor materials such as SiC, InP and GaAs.