The titanium nitride–aluminum oxide–hafnium oxide–silicon oxide–silicon device with aluminum oxide as charge-blocking layer (hereafter TAHOS) could be a candidate for nonvolatile total ionization dose (TID) radiation sensor. In this paper, gamma radiation induces a significant decrease in the threshold voltage V_T of TAHOS and the radiation-induced V_T decrease on TAHOS is nearly 1.3 times of that on a standard titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon (hereafter TOHOS) device after 5 Mrad TID gamma irradiation. The change in V_T of TAHOS after gamma irradiation also has a strong correlation to TID up to 5 Mrad gamma irradiation. The V_T retention characteristics of TAHOS devices can be improved before and after gamma irradiation. Moreover, the V_T retention characteristic  of TAHOS device can be markedly improved and is nearly 13% better than that of a standard TOHOS device after 5 Mrad gamma irradiation. Therefore, the TAHOS device in this study has demonstrated the possibility using TAHOS for high TID response and good TID data retention for non-volatile TID radiation sensing.