The operation of an ionic liquid-gated field effect transistor based on a single InAs nanowire will be presented and discussed. The voltage-biased ionic liquid implements the electric-double-layer inducing the field effect in the semiconductor nanostructure, and this allows to achieve the full control over the nanowire transistor. The ionic liquid gate is up to 40 times more performing with respect to the back-gate. The temperature dependence of the resistance, measured for different doping levels, reveals a clear change in the behavior of the nanostructure from fully semiconducting to quasi-metallic. Perspectives of the use of liquid gating techniques to operate nanodevices based on III-V semiconductor nanostructures will be discussed. These include fundamental and applied studies such as carrier density induced phase-transitions to bioelectronics, light emission and detection at the nanoscale, bio-sensing.
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Ionic liquid gating of semiconductor nanostructure-based devices
Published: 05 September 2018 by MDPI in 1st International Online Conference on Nanomaterials session Devices & Energy
Keywords: InAs nanowire, ionic liquid gating, metal-insulator transition