The work is devoted to the study of the modes of synthesis of films of nanocrystalline vanadium oxide for the manufacture of resistive memory elements (ReRAM) of neuromorphic systems. The regularities of the influence of pulsed laser deposition modes on the morphology and electrophysical properties of vanadium oxide films were experimentally established taking into account the technological parameters of the substrate temperature, oxygen pressure, the number of pulses, as well as the temperature and duration of postgrowth annealing. It is shown that the change in the number of pulses in the range from 10,000 to 50,000 pulses, substrate temperature from 25 to 650 °C, oxygen pressure from 10^-4 to 10^-1 Torr, temperature and duration of annealing in the range from 300 to 500 °C and from 30 to 180 minutes, respectively, makes it possible to obtain nanocrystalline films of vanadium oxide with grain size in the range from 231.3±45.3 to 721.8±123.2 nm, surface roughness in the range from 4.3±1.4 to 25.2±5.4 nm, resistivity from 2×10^-1 to 12×10³ Ω∙cm, and the coefficient of thermal resistance in the range from 0.14 to 0.48. Fabrication modes of nanocrystalline vanadium oxide films were determined with the high-resistance state R_HRS = 8 kΩ, the ratio of resistances in the high-resistance state to the resistance in the low-resistance state R_HRS/R_LRS=1427, as well as the minimum thermal resistance coefficient 0.21, for the creation of elements of resistive memory with low power consumption, a wide range of accepted possible resistance values, and a weak dependence on temperature. The obtained results can be used in the development of technological processes for the formation of nanocrystalline films of vanadium oxides for resistive memory elements in neuromorphic systems. The reported study was funded by RFBR, according to the research project N_ 19-29-03041_mk.