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Defective States in Micro-Crystalline CsPbBr3 and Their Role on Photoconductivity
Mara Bruzzi 1 , Fabio Gabelloni 1 , Nicola Calisi 2 , Stefano Caporali 2 , Anna Vinattieri 1
1  Dipartimento di Fisica e Astronomia, Università degli Studi di Firenze, Via G. Sansone 1, Sesto Fiorentino, 50019 Firenze, Italy;(F.G.);(A.V.)
2  Dipartimento di Ingegneria Industriale, Università degli Studi di Firenze, Via S. Marta 3, 50139 Firenze, Italy;(N.C.);(S.C.)

Published: 01 February 2019 by MDPI in Nanomaterials
MDPI, Volume 9; 10.3390/nano9020177
Abstract: Intrinsic defects in CsPbBr3 microcrystalline films have been studied using thermally stimulated current (TSC) technique in a wide temperature range (100–400 K). Below room temperature, TSC emission is composed by a set of several energy levels, in the range 0.11–0.27 eV, suggesting a quasi-continuum distribution of states with almost constant density. Above room temperature, up to 400 K, the temperature range of interest for solar cells, both dark current and photocurrent, are mainly dominated by energy levels in the range 0.40–0.45 eV. Even if measured trap densities are high, in the range 1013–1016 cm−3, the very small capture cross-sections, about 10−26 m2, agree with the high defect tolerance characterizing this material.
Keywords: thermally stimulated current, defects, charge transfer, Microcrystals, CsPbBr3
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