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Andrea Giaccherini     Post Doctoral Researcher 
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Andrea Giaccherini published an article in September 2018.
Top co-authors See all
Francesco Vizza

183 shared publications

ICCOM-CNR

Alberto Martinelli

97 shared publications

SPIN, Consiglio Nazionale delle Richerche - Istituto Superconduttori Materiali Innovativie Dispositivi, Corso Perrone 24, 16152 Genova, Genova, ITALY

Alessandro Lavacchi

83 shared publications

Institute for the Chemistry of Organometallic Compounds, Italian National Council for Research, 50019 Florence, Italy

Fabio Bernardini

69 shared publications

Department of Physics, University of Cagliari, Cittadella Universitaria, Monserrato, I-09042 Italy

Francesco Di Benedetto

67 shared publications

Department of Earth Sciences, University of Florence, Via La Pira 4, Firenze, 50121, Italy

6
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5
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Publication Record
Distribution of Articles published per year 
(2016 - 2018)
Total number of journals
published in
 
6
 
Publications
Article 1 Read 0 Citations Effect of Electrode Shape and Flow Conditions on the Electrochemical Detection with Band Microelectrodes Maher Al Khatib, Marco Bellini, Rebecca Pogni, Andrea Giacch... Published: 21 September 2018
Sensors, doi: 10.3390/s18103196
DOI See at publisher website ABS Show/hide abstract
In this work, we report the analysis of the electrochemical detection of electroactive species with band microelectrodes that operate under controlled convection. The study focuses on the determination of the collection efficiency of the analyte as a function of inlet flow velocity and microband geometry (inlaid, bumped and recessed), also providing a straightforward method for the theoretical determination of the lower detection limit. The analysis has been carried out by simulating the dimensionless mass transport with the finite element method, delivering the stationary limiting current density. Simulations have been performed on systems consisting of single and double band electrodes to investigate the trail effect on the electrochemical detection. We show that the obtained dimensionless results can be easily turned into dimensional data, providing a tool for the design of devices. The proposed method is general and can easily be extended to systems with different geometry.
Article 1 Read 0 Citations The puzzling structure of Cu5FeS4 (bornite) at low temperature Alberto Martinelli, Giovanni Orazio Lepore, Fabio Bernardini... Published: 23 August 2018
Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials, doi: 10.1107/s2052520618009812
DOI See at publisher website
Article 3 Reads 1 Citation Thermochemistry of the E-ALD process for the growth of Cu x Zn y S on Ag(111): Interpretation of experimental data Andrea Giaccherini, Giordano Montegrossi, Francesco Di Bened... Published: 01 February 2018
Electrochimica Acta, doi: 10.1016/j.electacta.2017.12.171
DOI See at publisher website
Article 0 Reads 3 Citations Operando SXRD study of the structure and growth process of Cu2S ultra-thin films Andrea Giaccherini, Serena Cinotti, Annalisa Guerri, Frances... Published: 09 May 2017
Scientific Reports, doi: 10.1038/s41598-017-01717-0
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Electrochemical Atomic Layer Deposition (E-ALD) technique has demonstrated to be a suitable process for growing compound semiconductors, by alternating the under-potential deposition (UPD) of the metallic element with the UPD of the non-metallic element. The cycle can be repeated several times to build up films with sub-micrometric thickness. We show that it is possible to grow, by E-ALD, Cu2S ultra-thin films on Ag(111) with high structural quality. They show a well ordered layered crystal structure made on alternating pseudohexagonal layers in lower coordination. As reported in literature for minerals in the Cu-S compositional field, these are based on CuS3 triangular groups, with layers occupied by highly mobile Cu ions. This structural model is closely related to the one of the low chalcocite. The domain size of such films is more than 1000 Å in lateral size and extends with a high crystallinity in the vertical growth direction up to more than 10 nm. E-ALD process results in the growth of highly ordered and almost unstrained ultra-thin films. This growth can lead to the design of semiconductors with optimal transport proprieties by an appropriate doping of the intra metallic layer. The present study enables E-ALD as an efficient synthetic route for the growth of semiconducting heterostructures with tailored properties.
BOOK-CHAPTER 0 Reads 1 Citation Operando Structural Characterization of the E-ALD Process Ultra-Thin Films Growth Andrea Giaccherini, Roberto Felici, Massimo Innocenti Published: 22 March 2017
X-ray Characterization of Nanostructured Energy Materials by Synchrotron Radiation, doi: 10.5772/67355
DOI See at publisher website
Article 0 Reads 2 Citations An Integrated Experimental/Theoretical Study of Structurally Related Poly-Thiophenes Used in Photovoltaic Systems Davide Vanossi, Luigi Cigarini, Andrea Giaccherini, Claudio ... Published: 19 January 2016
Molecules, doi: 10.3390/molecules21010110
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In this work, a series of eight thiophene-based polymers (exploited as “donors” in bulk heterojunction photovoltaics cells), whose structures were designed to be suitably tuned with the electronic characteristics of the [6,6]-Phenyl C61 butyric acid methyl ester (PCBM), is considered,. The electronic properties of the mono-, di-, trimeric oligomers are reckoned (at the Hartree-Fock and DFT level of the theory) and compared to experimental spectroscopic and electrochemical results. Indeed, electrochemical and spectroscopic results show a systematic difference whose physical nature is assessed and related to the exciton (electron-hole) binding energy ( J e , h ). The critical comparison of the experimental and theoretical band gaps, i.e., the HOMO-LUMO energy difference, suggests that electrochemical and DFT values are the most suited to being used in the design of a polythiophene-based p-n junction for photovoltaics.
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