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Nicolas André   Dr.   
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Nicolas André published an article in December 2018.
Top co-authors See all
Denis Flandre

492 shared publications

ICTEAM Institute, Université catholique de Louvain, 3 Place du Levant, B-1348, Louvain-la-Neuve, Belgium

Laurent A Francis

105 shared publications

Electrical Engineering Department, Universite Catholique de Louvain, Microsystems Chair, Place du Levant, 3, Maxwell Building, B-1348 Louvain-la-Neuve, BELGIUM, Louvain-la-Neuve, 1348, BELGIUM

Pierre Gérard

12 shared publications

ICTEAM, Universite Catholique de Louvain, Louvain-la-Neuve, BELGIUM

Syed Zeeshan Ali

4 shared publications

Cambridge CMOS Sensors Ltd, Deanland House, Cowley Road, Cambridge, CB4 0DL, United Kingdom

Florin Udrea

3 shared publications

Department of Engineering, Electrical Engineering Division, University of Cambridge, 9 JJ Thomson Avenue, CB3 0FA, Cambridge, United Kingdom

Publication Record
Distribution of Articles published per year 
(2004 - 2018)
Total number of journals
published in
Publications See all
Article 0 Reads 0 Citations Membrane Deflection and Stress in Thermal Flow Sensors Claudio Falco, Ethan L. W. Gardner, Andrea De Luca, Nicolas ... Published: 11 December 2018
Proceedings, doi: 10.3390/proceedings2131089
DOI See at publisher website ABS Show/hide abstract
The effect of membrane deflection has been investigated for thermal flow sensors. Catastrophic membrane breakage is a common occurrence in membrane based thermal flow sensors due to thermal expansion and internal stresses. This work analyses three sensors comprising a tungsten heater embedded in buried oxide membrane with a silicon nitride passivation layer, the use of back etching creates a cavity underneath to reduce the thermal conduction. The investigation is done using interferometry to measure the membrane shape at room and operating temperature for three membranes of different sizes. As expected, the deflection increases with temperature up to 15 µm at operating temperature and with the reduction of membrane size the deflection is reduced to a minimum of 3 µm for the smallest membrane. The lower deflection measured in devices with a smaller cavity can be related to a reduced internal stress, improving the long term stability.
Article 0 Reads 0 Citations Understanding hydrogen and nitrogen doping on active defects in amorphous In-Ga-Zn-O thin film transistors Guoli Li, Ablat Abliz, Lei Xu, Nicolas Andre, Xingqiang Liu,... Published: 18 June 2018
Applied Physics Letters, doi: 10.1063/1.5032169
DOI See at publisher website
Article 5 Reads 1 Citation A Low-Power and In Situ Annealing Technique for the Recovery of Active Devices After Proton Irradiation Laurent A. Francis, Amor Sedki, Nicolas André, Valéria Kilch... Published: 10 January 2018
EPJ Web of Conferences, doi: 10.1051/epjconf/201817001006
DOI See at publisher website
Article 2 Reads 0 Citations Leakage Current and Low-Frequency Noise Analysis and Reduction in a Suspended SOI Lateral p-i-n Diode Guoli Li, Valeriya Kilchytska, Nicolas Andre, Laurent A. Fra... Published: 01 October 2017
IEEE Transactions on Electron Devices, doi: 10.1109/TED.2017.2742863
DOI See at publisher website
Article 2 Reads 0 Citations Multiple-Wavelength Detection in SOI Lateral PIN Diodes With Backside Reflectors Guoli Li, Nicolas Andre, Pierre Gerard, Syed Zeeshan Ali, Fl... Published: 01 September 2017
IEEE Transactions on Industrial Electronics, doi: 10.1109/TIE.2017.2694393
DOI See at publisher website
Article 0 Reads 2 Citations In-situthermal annealing of on-membrane silicon-on-insulator semiconductor-based devices after high gamma dose irradiati... Sedki Amor, Nicolas André, Valeriya Kilchytska, Fares Tounsi... Published: 07 April 2017
Nanotechnology, doi: 10.1088/1361-6528/aa66a4
DOI See at publisher website PubMed View at PubMed