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J.H. Klootwijk  - - - 
Top co-authors
Ernst J.R. Sudhölter

40 shared publications

Department of Chemical Engineering; Delft University of Technology; van der Maasweg 9 2629 HZ Delft The Netherlands

Marleen Mescher

7 shared publications

Chemical Engineering, Delft University of Technology, 2628 BL Delft, The Netherlands.

Duco Bosma

5 shared publications

Chemical Engineering, Delft University of Technology, 2628 BL Delft, The Netherlands.

Aldo G.M. Brinkman

2 shared publications

NanoNextNL, P. O. Box 3021,3502 GA Utrecht,The Netherlands

13
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155
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Publication Record
Distribution of Articles published per year 
(2007 - 2014)
Total number of journals
published in
 
8
 
Publications See all
Article 3 Reads 3 Citations Influence of conductivity and dielectric constant of water-dioxane mixtures on the electrical response of SiNW-based FET... Marleen Mescher, Aldo G.M. Brinkman, Duco Bosma, Johan H. Kl... Published: 29 January 2014
Sensors, doi: 10.3390/s140202350
DOI See at publisher website PubMed View at PubMed ABS Show/hide abstract
In this study, we report on the electrical response of top-down, p-type silicon nanowire field-effect transistors exposed to water and mixtures of water and dioxane. First, the capacitive coupling of the back gate and the liquid gate via an Ag/AgCl electrode were compared in water. It was found that for liquid gating smaller potentials are needed to obtain similar responses of the nanowire compared to back gating. In the case of back gating, the applied potential couples through the buried oxide layer, indicating that the associated capacitance dominates all other capacitances involved during this mode of operation. Next, the devices were exposed to mixtures of water and dioxane to study the effect of these mixtures on the device characteristics, including the threshold voltage (V(T)). The V(T) dependency on the mixture composition was found to be related to the decreased dissociation of the surface silanol groups and the conductivity of the mixture used. This latter was confirmed by experiments with constant conductivity and varying water-dioxane mixtures.
Article 4 Reads 6 Citations MIM in 3D: Dream or reality? (invited) J.H. Klootwijk, K.B. Jinesh, F. Roozeboom Published: 01 July 2011
Microelectronic Engineering, doi: 10.1016/j.mee.2011.03.137
DOI See at publisher website
Article 0 Reads 13 Citations Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al[sub 2]O[sub 3] Thin Films K. B. Jinesh, J. L. Van Hemmen, M. C. M. Van De Sanden, F. R... Published: 01 January 2011
Journal of The Electrochemical Society, doi: 10.1149/1.3517430
DOI See at publisher website
Article 0 Reads 7 Citations Maxwell–Wagner instability in bilayer dielectric stacks K. B. Jinesh, Y. Lamy, J. H. Klootwijk, W. F. A. Besling Published: 21 September 2009
Applied Physics Letters, doi: 10.1063/1.3236532
DOI See at publisher website
Article 0 Reads 3 Citations Silicon out-diffusion and aluminum in-diffusion in devices with atomic-layer deposited La[sub 2]O[sub 3] thin films K. B. Jinesh, Y. Lamy, R. A. M. Wolters, J. H. Klootwijk, E.... Published: 10 November 2008
Applied Physics Letters, doi: 10.1063/1.3025850
DOI See at publisher website
Article 1 Read 6 Citations Enhanced electrical properties of atomic layer deposited La[sub 2]O[sub 3] thin films with embedded ZrO[sub 2] nanocryst... K. B. Jinesh, J. H. Klootwijk, Y. Lamy, R. Wolters, E. Tois,... Published: 27 October 2008
Applied Physics Letters, doi: 10.1063/1.3009202
DOI See at publisher website
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